2SC3074 Datasheet and Specifications PDF

The 2SC3074 is a Silicon NPN Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part Number2SC3074 Datasheet
ManufacturerToshiba
Overview TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • Hi. tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure .
Part Number2SC3074 Datasheet
DescriptionTO-252 NPN Transistor
ManufacturerInchange Semiconductor
Overview ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 ·Minimum Lot-to-Lot variations for robust device p. DITIONS BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB=0.15A VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB=0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current .
Part Number2SC3074 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Silicon NPN Epitaxial 2SC3074 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.1. Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute M.
Part Number2SC3074 Datasheet
DescriptionTO-251 NPN Transistor
ManufacturerInchange Semiconductor
Overview ·With TO-251(IPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 ·Minimum Lot-to-Lot variations for robust device p. DITIONS BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB=0.15A VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB=0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current .

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