| Part number | 2SC3086 |
|---|---|
| Datasheet | 2SC3086-INCHANGE.pdf |
| File Size | 212.17 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3086 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3086 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SC3086 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3083 | NPN Transistor |
| 2SC3087 | NPN Transistor |
| 2SC3088 | NPN Transistor |
| 2SC3089 | NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
| 2SC3032 | NPN Transistor |
| 2SC3038 | NPN Transistor |
| 2SC3039 | NPN Transistor |
