Inchange Semiconductor 2SC3122
Silicon NPN RF Transistor
| Part No. | 2SC3122 |
|---|---|
| Datasheet | 2SC3122 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Gain: Gpe= 24dB TYP. @ f= 200MHz●Low Noise: NF= 2.0dB TYP. @ f= 200MHz
APPLICATIONS
●Designed for TV VHF RF amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 20 mA IB B Base Current-Continuous 10 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website： Free Datasheet INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3122 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 2mA ; VCE= 10V 60 300 Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.3 0...
