Toshiba 2SC3122
Silicon NPN Transistor
| Part No. | 2SC3122 |
|---|---|
| Datasheet | 2SC3122 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High gain: Gpe = 24dB (typ.) (f = 200 MHz)
● Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
● Excellent forward AGC characteristics
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55~125 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse transfer capacitance Transition frequency Power gain Noise figure AGC voltage ICBO IEBO V (BR) CEO hFE Cre fT Gpe NF VAGC VCB = 25 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V,...
