Inchange Semiconductor 2SC3146
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3146 |
|---|---|
| Datasheet | 2SC3146 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)●High DC Current Gain : hFE= 2000(Min) @IC= 3.5A
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high-speed drivers applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 1.75 W 40 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3146 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; RBE= ∞ VCE(sat) Collector-Emitter Saturation...