2SC3146 Description
Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;RBE=: IC=5mA ;IE=0 IC=3.5A ,IB=7mA IC=3.5A ,IB=7mA VCB=40V, IE=0...