Inchange Semiconductor 2SC3150
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3150 |
|---|---|
| Datasheet | 2SC3150 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : V(BR)CBO= 900V(Min)●Fast Switching Speed
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulatorAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3150 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3150ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakd...
