2SC3150
2SC3150 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- High breakdown voltage : VCBO=900V(Min)
- Fast switching speed.
- Wide ASO (Safe Operating Area) APPLICATIONS
- 800V/3A switching regulator applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5m A ; RBE=; IC=1m A ; IE=0 IE=1m A ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=10MHz ; VCB=10V 10 8 MIN 800 900 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 f T COB
TYP.
UNIT V V V
2.0 1.5 10 10 40
V V µA µA
15 60
MHz p F
Switching times ton tstg tf Turn-on time Storage time Fall time VCC=400V; IC=2A IB1=0.4A;IB2=-0.8A; RL=200D 1.0 3.0 0.7 µs µs µs h FE-1 classifications K 10-20 L 15-30 M 20-40
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Savant IC Semiconductor
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