Datasheet Details
| Part number | 2SC3157 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.02 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3157-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3157.
| Part number | 2SC3157 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.02 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3157-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@IC= 5A ·Fast Switching Speed ·Complement to Type 2SA1261 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 1.5 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3157 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3157 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |
| 2SC3152 | NPN Transistor |
| 2SC3153 | NPN Transistor |
| 2SC3156 | NPN Transistor |
| 2SC3158 | NPN Transistor |
| 2SC3159 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |