Datasheet Details
| Part number | 2SC3257 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3257-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3257.
| Part number | 2SC3257 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3257-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3257 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3257 | Silicon NPN Transistor | Toshiba |
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2SC3257 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC3254 | NPN Transistor |
| 2SC3255 | NPN Transistor |
| 2SC3256 | NPN Transistor |
| 2SC3258 | NPN Transistor |
| 2SC3210 | NPN Transistor |
| 2SC3211 | NPN Transistor |
| 2SC3212 | NPN Transistor |
| 2SC3214 | NPN Transistor |