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2SC3257 - Silicon NPN Transistor

Key Features

  • . Excellent Switching Times : t r =1.0/is(Max. ) , tf =1 . 0,us(Max . ) at I C =6A . High Collector Breakdown Voltage : VcEO=200V.

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Datasheet Details

Part number 2SC3257
Manufacturer Toshiba
File Size 131.46 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3257 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SC3257 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r =1.0/is(Max.) , tf =1 . 0,us(Max . ) at I C =6A . High Collector Breakdown Voltage : VcEO=200V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature Ta=25 C Tc=25 C Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC stg ELECTRICAL CHARACTERISTICS (Ta =25°C) RATING 250 200 UNIT 10 15 1.5 40 150 -55^150 10.3MAX. 0Z.6i Q2 ' ' ^H X to iri H 5 s to iri 1.5 MAX. r i0.76 | 2.5 4 2.