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2SC3280 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor 2SC3280.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 8A ·Complement to Type 2SA1301 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;

IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 6A;

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Toshiba Logo 2SC3280 Silicon NPN Transistor Toshiba
SavantIC Logo 2SC3280 SILICON POWER TRANSISTOR SavantIC

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