Datasheet Details
| Part number | 2SC3285 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3285-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3285 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3285-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V(Min) ·High Speed Switching ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 70 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3285 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3285 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC3214 | NPN Transistor |
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| 2SC3229 | NPN Transistor |
| 2SC3231 | NPN Transistor |