Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
- High Switching Speed
- High Reliability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters
- General purpose power...
