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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
2SC3326
Unit: mm
AEC-Q101 Qualified (Note1). High emitter-base voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package
Note1: For detail information, please contact our sales.
2SC3326 Datasheet
