| Part Number | 2SC3326 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: VEBO = 25 V Hi. ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratin. |
2SC3326 Datasheet and Specifications PDF
The 2SC3326 is a Silicon NPN Transistor.
Key Specifications
| Package | TO-236 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 125 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SC3326 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 Small package. +0.1 0.38-0.1 +0.1 0.97-0.1 High DC current gain: hFE = 200 1200. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector. |