C3326
C3326 is 2SC3326 manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
2SC3326
Unit: mm
- AEC-Q101 Qualified (Note1).
- High emitter-base voltage: VEBO = 25 V
- High reverse h FE: Reverse h FE = 150 (typ.) (VCE =
- 2 V, IC =
- 4 m A)
- Low on resistance: RON = 1 Ω (typ.) (IB = 5 m A)
- High DC current gain: h FE = 200 to 1200
- Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
300 m A
60 m A
PC (Note 2, 4)
200 m W
PC (Note 3)
Tj (Note 2)
°C
Tj (Note...
