C3325 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC3325 Unit: mm - Excellent h FE linearity : h FE (2) = 25 (min) (VCE = 6 V, IC = 400 m A) - High voltage: VCEO = 50 V (min) - plementary to 2SA1313 - Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 500 m A 50 m A 200 m W °C - 55 to 150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of mercial production 1982-12 2014-03-01 Electrical Characteristics (Ta = 25°C) Characteristics...