C3324 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm - High voltage: VCEO = 120 V - Excellent h FE linearity: h FE (IC = 0.1 m A)/ h FE (IC = 2 m A) = 0.95 (typ.) - High h FE: h FE = 200~700 - Low noise: NF (2) = 0.2d B (typ.), 3d B (max) - plementary to 2SA1312 - Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 120 120 5 100 20 150 125 - 55~125 V V V m A m A m W °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Test Condition ICBO...