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2SC3328
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3328
Power Amplifier Applications Power Switching Applications
Unit: mm
• • •
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1315
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 2 1 900 150 −55 to 150 Unit V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Weight: 0.36 g (typ.)
1
2004-07-07
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2SC3328 Datasheet
