The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC3325
Unit: mm
• Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • High voltage: VCEO = 50 V (min) • Complementary to 2SA1313 • Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
50
V
50
V
5
V
500
mA
50
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.
2SC3325 Datasheet
