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2SC3325 - Silicon NPN Transistor

Key Features

  • +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). High voltage: VCEO = 50 V (min). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC.

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SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). High voltage: VCEO = 50 V (min). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.