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2SC3324 - Silicon NPN Epitaxial Transistor

Key Features

  • +0.1 2.4-0.1 High hFE. hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltageVCEO=120V 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 100 20 150 125 -55 to.

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Full PDF Text Transcription (Reference)

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SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High hFE.hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltageVCEO=120V 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.