| Part Number | 2SC3324 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency General Purpose Amplifier Applications High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/ hF. duct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaution. |
2SC3324 Datasheet and Specifications PDF
The 2SC3324 is a Silicon NPN TRANSISTOR.
Key Specifications
| Package | SOT-23-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 125 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SC3324 Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High hFE.hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +. +0.1 2.4-0.1 High hFE.hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltageVCEO=120V 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage. |