Unisonic Technologies 2SC3320
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
* High voltage, high speed switching * High reliability● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P 2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE BCE Packing Tube Tube
● MARKING INFORMATION PACKAGE TO-3P TO-3PN MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-008.E 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage VCBO VCEO VCEO(SUS) VEBO 500 400 400 7 V V V V Collector Current Base Current IC 15 A IB 5 A Power Dissipation Junction Temperature PD 80 W TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.