| Part number | 2SC3376 |
|---|---|
| Datasheet | 2SC3376-INCHANGE.pdf |
| File Size | 197.74 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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· ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3376 | NPN TRIPLE DIFFUSED TRANSISTOR | Toshiba Semiconductor |
See all Inchange Semiconductor datasheets
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| 2SC3300 | NPN Transistor |
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| 2SC3307 | NPN Transistor |
| 2SC3309 | NPN Transistor |
| 2SC3310 | NPN Transistor |
| 2SC3317 | NPN Transistor |
| 2SC3318 | NPN Transistor |
| 2SC3320 | NPN Transistor |
| 2SC3336 | NPN Transistor |
| 2SC3345 | NPN Transistor |
