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2SC3376 Datasheet | Specifications & PDF Download

2SC3376 NPN TRIPLE DIFFUSED TRANSISTOR

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2SC3376 - Silicon NPN Power Transistor

isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Speed Switching ·Mini

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Toshiba Semiconductor

C3376 - 2SC3376

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Toshiba Semiconductor

2SC3376 - NPN TRIPLE DIFFUSED TRANSISTOR

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