High Collector Current-IC= 5.0A
DC Current Gain-
: hFE= 70(Min)@IC= 4A
Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 4A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 5.0A ·DC Current Gain-
: hFE= 70(Min)@IC= 4A ·Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Strobe flash applications. ·Medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Pulse
8
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1
A
10 W
1.
2SC3420 Datasheet
