Datasheet Details
| Part number | 2SC3420 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.71 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3420-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3420 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.71 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3420-INCHANGE.pdf |
|
|
|
·High Collector Current-IC= 5.0A ·DC Current Gain- : hFE= 70(Min)@IC= 4A ·Low Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications.
·Medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC3420 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3420 | Silicon NPN Transistor | Toshiba Semiconductor |
 |
2SC3420 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SC3420 | NPN Transistor | JCET |
 |
2SC3420 | NPN Transistor | GME |
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