Inchange Semiconductor 2SC3420
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3420 |
|---|---|
| Datasheet | 2SC3420 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC= 5.0A●DC Current Gain- : hFE= 70(Min)@IC= 4A
●Low Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 4A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Strobe flash applications.●Medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC3420 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collec...