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2SC3461 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Full PDF Text Transcription for 2SC3461 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC3461. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum ...

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800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3461 isc website：www.iscsemi

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sanyo Semicon Device Logo 2SC3461 NPN Transistor Sanyo Semicon Device
SavantIC Logo 2SC3461 SILICON POWER TRANSISTOR SavantIC

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