Inchange Semiconductor 2SC3461
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3461 |
|---|---|
| Datasheet | 2SC3461 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min)●High Switching Speed
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching regulator and high voltage switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3461 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3461ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base B...