Datasheet Details
| Part number | 2SC3462 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.55 KB |
| Description | Power Transistor |
| Download | 2SC3462 Download (PDF) |
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| Part number | 2SC3462 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.55 KB |
| Description | Power Transistor |
| Download | 2SC3462 Download (PDF) |
|
|
|
·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3462 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO VCEO(SUS) V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage IC= 5mA;
RBE= ∞ IC= 2A;
IB1= -IB2= 0.4A;
isc Silicon NPN Power Transistor.
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