Datasheet Details
| Part number | 2SC3446 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3446_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3446.
| Part number | 2SC3446 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3446_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3446 | NPN Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
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