Datasheet Details
| Part number | 2SC3449 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3449_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3449.
| Part number | 2SC3449 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3449_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage ·High breakdown voltage and high reliability ·Fast switching speed ·Wide ASO ·NPN triple diffused planar silicon transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3449 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3449 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
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| 2SC3412 | Power Transistor |
| 2SC3421 | Silicon NPN Power Transistor |
| 2SC3422 | Silicon NPN Power Transistor |
| 2SC3462 | Power Transistor |
| 2SC3475 | Power Transistor |
| 2SC3479 | Power Transistor |
| 2SC3480 | Power Transistor |
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