| Part number | 2SC3449 |
|---|---|
| Datasheet | 2SC3449_InchangeSemiconductor.pdf |
| File Size | 192.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3449 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3449 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3446 | Silicon NPN Power Transistor |
| 2SC3448 | Silicon NPN Power Transistor |
| 2SC3412 | Power Transistor |
| 2SC3421 | Silicon NPN Power Transistor |
| 2SC3422 | Silicon NPN Power Transistor |
| 2SC3462 | Power Transistor |
| 2SC3475 | Power Transistor |
| 2SC3479 | Power Transistor |
| 2SC3480 | Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
