Adoption of MBIT process. Package Dimensions
unit:mm 2010C
[2SC3446]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature.
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Ordering number:EN1544B
NPN Triple Diffused Planar Silicon Transistor
2SC3446
500V/3A Switching Regulator Applications
Features
· High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process.