2SC3412 datasheet by Inchange Semiconductor.
| Part number | 2SC3412 |
|---|---|
| Datasheet | 2SC3412_InchangeSemiconductor.pdf |
| File Size | 208.33 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown...
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