Datasheet Details
| Part number | 2SC3506 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3506-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3506.
| Part number | 2SC3506 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3506-INCHANGE.pdf |
|
|
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·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and high voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 70 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3506 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SC3506 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3505 | NPN Transistor |
| 2SC3507 | NPN Transistor |
| 2SC3518 | NPN Power Transistor |
| 2SC3519 | NPN Transistor |
| 2SC3519A | NPN Transistor |
| 2SC3527 | Silicon NPN Power Transistor |
| 2SC3528 | NPN Transistor |
| 2SC3540 | NPN Transistor |
| 2SC3549 | NPN Transistor |
| 2SC3551 | NPN Transistor |