Power Transistors 2SC3506 Silicon NPN triple diffu.
2SC3506 - NPN Transistor
isc Silicon NPN Power Transistor 2SC3506 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed APPLICATI.2SC3506 - Silicon NPN Transistor
Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7) ■ Features 11.0±0.2.2SC3506 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION ·With TO-3PFa package ·High-spe.