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2SC3559 - NPN Transistor

Datasheet Summary

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching regulator and high voltage switching applications.

High speed DC-DC converter appli

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Datasheet Details

Part number 2SC3559
Manufacturer INCHANGE
File Size 192.71 KB
Description NPN Transistor
Datasheet download datasheet 2SC3559 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor 2SC3559 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
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