2SC3559 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IC=0.8A; VCE=5V 10 MIN 800 900 2SC3559 SYMBOL V(BR)CEO V(BR)CBO...