Datasheet Details
| Part number | 2SC3677 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3677-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3677.
| Part number | 2SC3677 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.68 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3677-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·High breakdown voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3677 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=2A;
IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=2A;
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