Datasheet Details
| Part number | 2SC3676 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.79 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3676-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3676.
| Part number | 2SC3676 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.79 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3676-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·High breakdown voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3676 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC=60mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3676 | NPN Transistor | Sanyo Semicon Device |
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