2SC3676 Description
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC=60mA; IB=12mA 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 60mA;.
2SC3676 is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC3676 | NPN Transistor |
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC=60mA; IB=12mA 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 60mA;.