Download 2SC3676 Datasheet PDF
Inchange Semiconductor
2SC3676
DESCRIPTION - Low Collector Saturation Voltage - High breakdown voltage - Small Cob - Good Linearity of h FE - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High voltage amplifier - High-voltage switching applications - Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power...