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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3671
Strobe Flash Applications Medium Power Amplifier Applications
2SC3671
Unit: mm
• High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High collector power dissipation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB PC Tj Tstg
50 40 20 8 5
8
0.
C3671 Datasheet
