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C3675 - 2SC3675

Key Features

  • High breakdown voltage (VCEO min=900V).
  • Small Cob (Cob typ=2.8pF).
  • Wide ASO (Adoption of MBIT process).
  • High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C.

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📁 Similar Datasheet

Part Number Description Manufacturer
C3670 2SC3670 Toshiba
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C3673 2SC3673 Toshiba
C3676 2SC3676 Sanyo

Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3636 2SC3636
C3642 2SC3642
C3654 2SC3654
C3685 2SC3685
C3686 2SC3686

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. www.DataSheet4U.com Package Dimensions unit:mm 2010C [2SC3675] Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process).