C3676 - 2SC3676

SANYO (now Panasonic)

Key Features

High breakdown voltage (VCEO min=900V).
Small Cob (Cob typ=5.0pF).
Wide ASO (Adoption of MBIT process).
High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junctio.

C3676 2sc3676 by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	C3676
Manufacturer	SANYO (now Panasonic)
File Size	94.90 KB
Description	2SC3676
Datasheet	C3676 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
C3670	2SC3670	Toshiba
C3671	2SC3671	Toshiba
C3672	2SC3672	Toshiba
C3673	2SC3673	Toshiba
C3675	2SC3675	Sanyo Semicon Device

Other Datasheets by SANYO (now Panasonic)

Part Number	Description
C3600	2SC3600
C3637	2SC3637
C3638	2SC3638
C3643	2SC3643
C3644	2SC3644

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=5.0pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process).