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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3672
2SC3672
High-Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Unit: mm
• High breakdown voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complementary to 2SA1432.