Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
- Low noise figure, high gain.
- NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current
Collector power dissipation
VCBO VCEO VEBO
IB IC
20 12 3 40 80 400 800 (Note 1)
Junction temperature Storage temperature range
Tj 150 Tstg -55~125
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 t
Unit V V V mA mA mW
°C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g...