Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
- Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
- High-speed switching: tstg = 1.0 μs (typ.)
- plementary to...