Part C3669
Description 2SC3669
Manufacturer Toshiba
Size 143.80 KB
Toshiba
C3669

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (...