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C3661 - 2SC3661

Key Features

  • Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer.
  • Adoption of FBET process.
  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storag.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3664 2SC3664
C3600 2SC3600
C3637 2SC3637
C3638 2SC3638
C3643 2SC3643

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuit. Features · Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V).