Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3668
Power Amplifier Applications Power Switching Applications
2SC3668
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
- High collector power dissipation: PC = 1000 mW
- High-speed switching: tstg = 1.0 μ (typ.)
- plementary to...