Datasheet4U Logo Datasheet4U.com

C3664 - 2SC3664

Key Features

  • Fast speed (adoption of MBIT process).
  • High breakdown voltage (VCBO=800V).
  • High reliability (adoption of HVP process).
  • On-chip damper diode. Package Dimensions unit:mm 2022A [2SC3664] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C3665 2SC3665 Toshiba Semiconductor
C3668 2SC3668 Toshiba
C3669 2SC3669 Toshiba
C3605 2SC3605 Toshiba Semiconductor
C3606 2SC3606 Toshiba

Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3661 2SC3661
C3600 2SC3600
C3637 2SC3637
C3638 2SC3638
C3643 2SC3643

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications · Induction cookers. · High-voltage, high power switching. Features · Fast speed (adoption of MBIT process). · High breakdown voltage (VCBO=800V). · High reliability (adoption of HVP process). · On-chip damper diode.