2SC3670
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
- High DC current gain and excellent h FE linearity : h FE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : h FE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IB PC Tj Tstg
30 30 10 6 2
0.5 1000 150
- 55 to 150
A m W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and...
